NU 2021-078

INVENTORS

• Mark Hersam*

• Eden B Aklile

• Qiucheng Li

• Xiaolong Liu

SHORT DESCRIPTION

This invention presents a novel method for the synthesis of mixed-dimensional lateral heterostructures with integrated 2D metallic borophene and 1D semiconducting graphene nanoribbons, offering atomically precise metal-semiconductor heterojunctions for advanced nanoelectronic applications.

BACKGROUND

The integration of two-dimensional (2D) materials with distinct electronic properties has been a significant challenge due to the need for interfacial lattice matching and compatible growth conditions. Traditional methods have been limited to specific material combinations, such as graphene/hexagonal boron nitride. Borophene, a 2D material with unique electronic properties, offers a promising alternative due to its polymorphic nature and bonding flexibility. This invention addresses the limitations of existing technologies by enabling the synthesis of mixed-dimensional heterostructures with atomically abrupt interfaces, paving the way for innovative nanoelectronic devices.

ABSTRACT

The invention introduces a method for synthesizing mixed-dimensional lateral heterostructures by combining 2D metallic borophene with 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). This is achieved through the sequential deposition of boron and 4,4''-dibromo-p-terphenyl (DBTP) on a silver substrate, followed by controlled post-annealing in ultrahigh vacuum. The resulting borophene/aGNR interfaces are structurally and electronically abrupt, forming atomically well-defined metal-semiconductor heterojunctions. This advancement overcomes previous synthesis challenges, offering a new approach to creating nanoelectronic components with precise atomic control.

APPLICATIONS

• Thin-film transistors

• Optoelectronics

• High-frequency logic

• Energy conversion and storage

• Quantum information technologies

• Wearable physiological monitors

ADVANTAGES

• Overcomes limitations of traditional 2D/2D heterojunctions

• First integration of borophene with graphene nanoribbons

• Atomically abrupt interfaces with no interface states

• Promising for atomically precise nanoelectronics

PUBLICATIONS

Mark C. Hersam et al., "Self-Assembled Borophene/Graphene Nanoribbon Mixed-Dimensional Heterostructures," Nano Letters, April 30, 2021.

IP STATUS

Issued US Patent US12116279B2