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Antiferromagnetic Memory Device with Tunneling Magnetoresistance
NU 2021-234
INVENTORS
Pedram Khalili Amiri*
SHORT DESCRIPTION
This invention presents an antiferromagnetic memory device that utilizes tunneling magnetoresistance for reading and current-induced methods for writing information, offering enhanced density, speed, and security for spintronic memory applications.
BACKGROUND
Magnetic memory devices...
Published: 11/6/2025
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Inventor(s):
Keywords(s): Advanced silicon nodes, Antiferromagnetic memory, Artificial Intelligence & Machine Learning, HPC, Magnetic field immunity, Magnetoresistance, Neural Network
Category(s): Physical Sciences > Engineering & Technology
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