NU 2020-026

INVENTORS
Lincoln Lauhon*
Michael Moody
Ju Ying Shang

ABSTRACT
Electronic devices such as computers are made by depositing many thin films of active materials.  The resulting structures must meet tight requirements. Inconsistencies in a deposition can result in variation that is only discovered after external testing, by which point the whole device must be discarded. By performing more measurements during each deposition, yield may be increased and waste may be reduced. This same approach of real-time measurement can also be useful for efficiently developing new materials and structures.

APPLICATIONS  

• Process control to improve yield of thin film growth by ALD, CVD, or PVD especially for electronic applications
• Development of deposition processes
• Development of electronic devices
• Stress testing / degradation

ADVANTAGES  

• Existing electrical measurements are generally done after the deposition is over, when it is too late to change the process
• Measurements done during deposition are generally optical, which may not correspond as directly to the desired electronic function.

PUBLICATION
Shang JY, Moody M, Chen J, Krylyuk S, Davydov A, Marks T and Lauhon L (2020) In Situ Transport Measurements Reveal Source of Mobility Enhancement of MoS2 and MoTe2 during Dielectric Deposition.  ACS Applied Electronic Materials. 2:  1273-1279.

IP STATUS
A US patent application has been filed.