NU 2021-042

INVENTORS

• Hooman Mohseni*
• Simone Bianconi

SHORT DESCRIPTION

This invention introduces a novel method for fabricating memristor-type devices within various dielectric layers using ion-induced defects and vacancies, significantly improving device density, uniformity, and performance.

BACKGROUND

Memristors are pivotal in the development of neuromorphic and memory systems due to their ability to mimic synaptic functions. Traditional memristor arrays, however, face challenges such as high metal capacitance and low yield due to the constraints imposed by metal contact geometry. These limitations hinder the scalability and efficiency of memristor-based systems. The current invention addresses these issues by enabling the creation of dense arrays of uniform memristors with reduced capacitance and enhanced reproducibility, thus overcoming the drawbacks of existing technologies.

ABSTRACT

The disclosed technology provides a method for fabricating memristor-type devices through the introduction of ion-induced defects and vacancies in dielectric layers. This approach allows for the precise positioning of memristors without being constrained by metal contact geometry, resulting in devices with low capacitance and high uniformity. The innovation facilitates the production of dense memristor arrays with improved performance metrics, including high reproducibility and low noise, making them ideal for advanced computing applications.

APPLICATIONS

• Neuromorphic computing systems
• High-density memory storage
• Energy-efficient data processing

ADVANTAGES

• Higher density of memristors
• Improved uniformity across devices
• Lower capacitance leading to energy efficiency

IP STATUS

Issued US Patent No. 12,185,645